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Dataset: A wide-temperature range wire-line communication link using the NASA Glenn SiC JFET technology, Phase I
Provided by National Aeronautics and Space Administration
Updated 12 Nov 2020

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Dataset summary

The dataset on this page is a cache of the dataset https://catalog.data.gov/dataset/a-wide-temperature-range-wire-line-communication-link-using-the-nasa-glenn-sic-jfet-techno. It is a snapshot of the dataset as it appeared on 06 Jun 2021 22:22 GMT. The current dataset could have changed in the meantime. Attribution: Contains data retrieved from Data.gov.

NASA has demonstrated a resolve for a flagship mission in the coming years to revisit Venus and land instruments on the surface. Venus has a corrosive, high pressure (~100 bar), high-temperature (up to 500 C) environment presenting extreme design challenges for lander electronics. The ability to establish simple wire-line communications between circuits operating in extremely disparate temperature domains is a critical need. Different technologies have specific strengths (complexity, density, area, power) which span from high-performance, lower-temperature silicon to medium-density SiC-CMOS and lower-density, high-reliability SiC JFET-R. A viable lander design requires applying the right technology to each temperature domain. The premier IC process for ultra-high temperatures is the SiC JFET technology developed at NASA Glenn Research Center (GRC). In Phase I, Ozark IC proposes to use its extensive high temperature device and circuit expertise to create a PDK for the GRC SiC JFET proce...

Dataset:A wide-temperature range wire-line communication link using the NASA Glenn SiC JFET technology, Phase I
Provider:National Aeronautics and Space Administration
Created:12/11/2020
Updated:12/11/2020
Licence:License information is derived automatically. Refer to source for license information before using this data.
notspecified
License not specified
Country:United States of America

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